Preparation and formation mechanism of ZnS semiconductor nanowires made by the electrochemical deposition method

被引：100
|
作者：
Xu, XJ [1 ]
Fei, GT [1 ]
Yu, WH [1 ]
Wang, XW [1 ]
Chen, L [1 ]
Zhang, LD [1 ]
机构：
[1] Chinese Acad Sci, Hefei Inst Phys Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
来源：
NANOTECHNOLOGY | 2006年 / 17卷 / 02期
关键词：
D O I：
10.1088/0957-4484/17/2/013
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
ZnS nanowire arrays have been prepared for the first time by direct-current electrodeposition into the nanopores of porous anodic alumina membranes (AAMs), and the growth mechanism is that metal cations are firstly reduced and then react with elemental S to form ZnS nanowire arrays in the nanopores of AAMs. The nanopores of AAMs are of benefit to the formation of sulfide nanowires.
引用
收藏
页码：426 / 429
页数：4
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