Preparation and formation mechanism of ZnS semiconductor nanowires made by the electrochemical deposition method

被引：100

作者：

Xu, XJ ^{[1
]}

Fei, GT ^{[1
]}

Yu, WH ^{[1
]}

Wang, XW ^{[1
]}

Chen, L ^{[1
]}

Zhang, LD ^{[1
]}

机构：

[1] Chinese Acad Sci, Hefei Inst Phys Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China

来源：

NANOTECHNOLOGY | 2006年 / 17卷 / 02期

关键词：

D O I：

10.1088/0957-4484/17/2/013

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

ZnS nanowire arrays have been prepared for the first time by direct-current electrodeposition into the nanopores of porous anodic alumina membranes (AAMs), and the growth mechanism is that metal cations are firstly reduced and then react with elemental S to form ZnS nanowire arrays in the nanopores of AAMs. The nanopores of AAMs are of benefit to the formation of sulfide nanowires.

引用

页码：426 / 429

页数：4

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