Microstructure study of the oxidation of TiN layers during sputtering process

被引：0
|
作者：
Wang, Chun [1 ]
机构：
[1] Carnegie Mellon Univ, Dept Elect & Comp Engn, Ctr Data Storage Syst, Pittsburgh, PA 15213 USA
来源：
RELIABILITY AND MATERIALS ISSUES OF SEMICONDUCTOR OPTICAL AND ELECTRICAL DEVICES AND MATERIALS | 2010年 / 1195卷
关键词：
FILMS;
D O I：
10.1557/PROC-1195-B08-23
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
TiN provides a good template layer for the epitaxial SrTiO3 (001) growth on Si(001) single crystal substrates by RF sputtering. However, TiN template layer was oxidized into TiO2 during the subsequent sputtering process of electrodes of SrRuO3. The effect of Ru ion catalyzed oxidation and delamination of the TiN layer has been studied using transmission electron microscopy (TEM) and high-resolution transmission electron microscope (HRTEM). The epitaxial orientation relationship of the SrRuO3 and SrTiO3 was reserved to be cube on cube with respect to Si and the crystal quality of the SrRuO3/SrTiO3 film remained even when the TiN template layer was oxidized. The stress in the thin film of SrRuO3/SrTiO3/TiN structure could be determined from the buckle shape in both plan view and cross sectional TEM images.
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页数：5
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