The design of SiGe HBT direct-coupled LNA

被引：0
|
作者：
Yang Weiming [1 ]
Chen Jianxin [1 ]
Xie Wanbo [1 ]
Shi Chen [1 ]
机构：
[1] Beijing Univ Technol, Beijing Optoelect Technol Lab, Beijing 100022, Peoples R China
来源：
2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5 | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A direct-coupled low noise amplifier was designed and fabricated on a Teflon substrate, using packaged SiGe HBTs BFP420 and chip type passive components. This SiGe LNA has the advantages such as the wide bandwidth (15GHz), the low noise figure (NF <= 2.23dB), the high power gain (S21 >= 26.7dB), the input and output VSWR are all less than 2. The design principle and technology features of the broadband amplifier was described. The computer simulated results were coincident with that of the test.
引用
收藏
页码：1123 / 1126
页数：4
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