Highly compact 3.1-10.6 GHz UWB LNA in SiGe HBT technology

被引：0
|
作者：
Dederer, J. [1 ]
Chartier, S. [1 ]
Feger, T. [1 ]
Spitzberg, U. [1 ]
Trasser, A. [1 ]
Schumacher, H. [1 ]
机构：
[1] Univ Ulm, Inst Elect Devices & Circuits, D-89069 Ulm, Germany
来源：
2007 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, VOLS 1 AND 2 | 2007年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present the design, implementation and measurement of a low noise amplifier (LNA) in a low cost 0.8 mu m SiGe heterojunction bipolar technology (HBT). The measured noise figure is between 2.1dB and 2.6dB in the FCC-allocated bandwidth for ultra-wideband (UWB) systems. The circuit delivers 19.6dB peak gain with gain variations of 1.3dB within the entire band from 3.1 to 10.6GHz. Broadband noise and power matching has been achieved with a cascode topology using resistive shunt feedback in combination with a diode DC level shifter. The measured input IP3 is - 14.1 dBm with 10.3 mA total current from a 3.5 V supply. All performance characteristics are comparable to the best reported UWB LNAs but come at a drastically smaller occupied die area of 0.13 mm(2).
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页码：276 / 279
页数：4
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