Optical properties of AlxGa1-xAsySb1-y epitaxial layers

被引：0

作者：

Swiatek, K ^{[1
]}

Piskorski, M ^{[1
]}

Piotrowski, TT ^{[1
]}

机构：

[1] INST ELECTRON TECHNOL, PL-02668 WARSAW, POLAND

来源：

ACTA PHYSICA POLONICA A | 1996年 / 90卷 / 05期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Photoluminescence spectra of AlxGa1-xAsySb1-y layers (x = 0.2-0.5, y = 0.02-0.03) grown by liquid-phase epitaxy on GaSb substrates were studied in a wide temperature range (14-295 K). The temperature changes of energy and intensity of the layer and substrate emission were measured. Linear part of the temperature-induced energy shift of the Al0.20Ga0.80As0.02Sb0.98 band-to-band emission exhibits a slope of -0.3 meV/K and -0.45 meV/K at temperatures 150 K and 295 K, respectively.

引用

页码：1100 / 1102

页数：3

共 50 条

[41] Strain monitoring in InAs-AlxGa1-xAsySb1-y structures grown by molecular beam epitaxy
Triplett, Gregory E.
Brown, April S.
May, Gary S.
APPLIED PHYSICS LETTERS, 2006, 89 (03)
[42] PHOTOLUMINESCENCE FROM EPITAXIAL LAYERS OF ALXGA1-XP
ALESHIN, VD
BORSHCHENSKII, VV
BRINKEVICH, DI
PETROV, VV
SOBOLEV, NA
SAMONOV, SM
INORGANIC MATERIALS, 1994, 30 (08) : 937 - 939
[43] Optical investigation of AlxGa1-xN epitaxial films grown on AlN buffer layers
Teofilov, N
Thonke, K
Sauer, R
Kirste, L
Ebling, DG
Benz, KW
DIAMOND AND RELATED MATERIALS, 2002, 11 (3-6) : 892 - 895
[44] Isotherm Theoretical Study of the AlxGa1-xAsySb1-y Quaternary Alloy Using the Regular Solution Approximation for Its Possible Growth via Liquid-Phase Epitaxy at Low Temperatures
Gastellou, Erick
Garcia, Rafael
Herrera, Ana M.
Ramos, Antonio
Garcia, Godofredo
Robles, Mario
Rodriguez, Jorge A.
Ramirez, Yani D.
Carrillo, Roberto C.
ENTROPY, 2022, 24 (12)
[45] MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF ALXGA1-XASYSB1-Y (0.0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1.0) LATTICE MATCHED TO INAS SUBSTRATES
LOTT, JA
DAWSON, LR
JONES, ED
FRITZ, IJ
NELSON, JS
KURTZ, SR
JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (09) : 989 - 993
[46] Growth and properties of InxGal-xAsySb1-y on GaSb
Rakovics, V
Balázs, J
Podör, B
Tóth, AL
Horváth, ZJ
Horváth, ZE
PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2, 2002, 4746 : 1195 - 1199
[47] High optical anisotropy of the GaSb/GaxIn1-xAsySb1-y interface
Rygala, Michal
Ziembicki, Jakub
Smolka, Tristan
Bader, Andreas
Knebl, Georg
Pfenning, Andreas
Ryczko, Krzysztof
Hartmann, Fabian
Scharoch, Pawel
Sek, Grzegorz
Hoefling, Sven
Motyka, Marcin
PHYSICAL REVIEW APPLIED, 2025, 23 (01):
[48] Optical properties of ultrathin GaAs layers embedded in AlxGa1-xAs
Bitz, A
Di Ventra, M
Baldereschi, A
Staehli, JL
Pietag, F
Gottschalch, V
Rhan, H
Schwabe, R
PHYSICAL REVIEW B, 1998, 57 (04): : 2426 - 2430
[49] Optical properties and ordering of AlxGa1-xN MBE-layers
Ebling, DG
Kirste, L
Benz, KW
Teofilov, N
Thonke, K
Sauer, R
JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 453 - 457
[50] OPTICAL-PROPERTIES OF ZN1-XMGXSYSE1-Y EPITAXIAL LAYERS FOR BLUE-GREEN LASER APPLICATIONS
LUNZ, U
JOBST, B
EINFELDT, S
BECKER, CR
HOMMEL, D
LANDWEHR, G
JOURNAL OF APPLIED PHYSICS, 1995, 77 (10) : 5377 - 5380

← 1 2 3 4 5 →