Optical properties of AlxGa1-xAsySb1-y epitaxial layers

被引:0
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作者
Swiatek, K [1 ]
Piskorski, M [1 ]
Piotrowski, TT [1 ]
机构
[1] INST ELECTRON TECHNOL, PL-02668 WARSAW, POLAND
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O4 [物理学];
学科分类号
0702 ;
摘要
Photoluminescence spectra of AlxGa1-xAsySb1-y layers (x = 0.2-0.5, y = 0.02-0.03) grown by liquid-phase epitaxy on GaSb substrates were studied in a wide temperature range (14-295 K). The temperature changes of energy and intensity of the layer and substrate emission were measured. Linear part of the temperature-induced energy shift of the Al0.20Ga0.80As0.02Sb0.98 band-to-band emission exhibits a slope of -0.3 meV/K and -0.45 meV/K at temperatures 150 K and 295 K, respectively.
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页码:1100 / 1102
页数:3
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