Optical properties of AlxGa1-xAsySb1-y epitaxial layers

被引：0
|
作者：
Swiatek, K [1 ]
Piskorski, M [1 ]
Piotrowski, TT [1 ]
机构：
[1] INST ELECTRON TECHNOL, PL-02668 WARSAW, POLAND
来源：
ACTA PHYSICA POLONICA A | 1996年 / 90卷 / 05期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Photoluminescence spectra of AlxGa1-xAsySb1-y layers (x = 0.2-0.5, y = 0.02-0.03) grown by liquid-phase epitaxy on GaSb substrates were studied in a wide temperature range (14-295 K). The temperature changes of energy and intensity of the layer and substrate emission were measured. Linear part of the temperature-induced energy shift of the Al0.20Ga0.80As0.02Sb0.98 band-to-band emission exhibits a slope of -0.3 meV/K and -0.45 meV/K at temperatures 150 K and 295 K, respectively.
引用
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页码：1100 / 1102
页数：3
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