TECHNOLOGY OF POROUS SILICON DIOXIDE FILMS SYNTHESIS AND THEIR ELECTRICAL PROPERTIES

被引：0
|
作者：
Sakharov, Yu. V. [1 ]
Troyan, P. E. [1 ]
机构：
[1] Tomsk State Univ Control Syst & Radioelect TUSUR, 40 Lenin Str, Tomsk 634050, Russia
来源：
2014 24TH INTERNATIONAL CRIMEAN CONFERENCE MICROWAVE & TELECOMMUNICATION TECHNOLOGY (CRIMICO) | 2014年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the synthesis technology and electrical properties of porous silicon dioxide films made by magnetron sputtering of the composite target (Si:C) in the oxygen atmosphere. Such method is fully compatible with the existing stages of integrated circuits production implemented in the majority of cases in vacuum conditions.
引用
收藏
页码：682 / 683
页数：2
相关论文
共 50 条
  • [41] Synthesis of GaN films on porous silicon substrates
    DONG Zhihua
    Rare Metals, 2006, (01) : 96 - 98
  • [42] OPTICAL-PROPERTIES OF POROUS SILICON FILMS
    PICKERING, C
    BEALE, MIJ
    ROBBINS, DJ
    PEARSON, PJ
    GREEF, R
    THIN SOLID FILMS, 1985, 125 (1-2) : 157 - 163
  • [43] Growth and properties of PbTe films on porous silicon
    Zimin, SP
    Preobrazhensky, MN
    Zimin, DS
    Zaykina, RF
    Borzova, GA
    Naumov, VV
    INFRARED PHYSICS & TECHNOLOGY, 1999, 40 (04) : 337 - 342
  • [44] Optical properties of porous silicon thin films
    Rotaru, C
    Tomazeiu, N
    Craciun, G
    JOURNAL OF MOLECULAR STRUCTURE, 1999, 481 : 293 - 296
  • [45] Properties of silicon doped silicon dioxide thin films deposited by Co-sputtering of silicon and silicon dioxide
    Sandhu, A
    Show, Y
    Katano, T
    Iwase, M
    Izumi, T
    Yabe, T
    Nozaki, S
    Morisaki, H
    APPLIED SURFACE SCIENCE, 1997, 117 : 634 - 637
  • [46] SILICON DIOXIDE AND SILICON-NITRIDE FILMS IN INTEGRATED-CIRCUIT TECHNOLOGY
    NICOLLIAN, EH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : C362 - C362
  • [47] Transient and AC electrical conductivity of porous silicon thin films
    Theodoropoulou, M
    Krontiras, CA
    Xanthopoulos, N
    Georga, SN
    Pisanias, MN
    Tsamis, C
    Nassiopoulou, AG
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 197 (01): : 279 - 283
  • [48] Electrical properties of carbon nitride films on silicon
    Konofaos, N
    Evangelou, EK
    Logothetidis, S
    Gioti, M
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (12) : 9915 - 9918
  • [49] INFLUENCE OF OXIDE FILMS ON THE ELECTRICAL PROPERTIES OF SILICON
    ARSLAMBEKOV, VA
    SMIRNOV, GV
    SOVIET PHYSICS-SOLID STATE, 1964, 6 (01): : 250 - 251
  • [50] Electrical properties of amorphous silicon carbide films
    Biswas, N
    Wang, X
    Gangopadhyay, S
    APPLIED PHYSICS LETTERS, 2002, 80 (18) : 3439 - 3441
12345