TECHNOLOGY OF POROUS SILICON DIOXIDE FILMS SYNTHESIS AND THEIR ELECTRICAL PROPERTIES

被引：0
|
作者：
Sakharov, Yu. V. [1 ]
Troyan, P. E. [1 ]
机构：
[1] Tomsk State Univ Control Syst & Radioelect TUSUR, 40 Lenin Str, Tomsk 634050, Russia
来源：
2014 24TH INTERNATIONAL CRIMEAN CONFERENCE MICROWAVE & TELECOMMUNICATION TECHNOLOGY (CRIMICO) | 2014年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the synthesis technology and electrical properties of porous silicon dioxide films made by magnetron sputtering of the composite target (Si:C) in the oxygen atmosphere. Such method is fully compatible with the existing stages of integrated circuits production implemented in the majority of cases in vacuum conditions.
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页码：682 / 683
页数：2
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