Self-doping effects in epitaxially grown graphene

被引：35

作者：

Siegel, D. A. ^{[1
,2
]}

Zhou, S. Y. ^{[1
,2
]}

El Gabaly, F. ^{[3
]}

Fedorov, A. V. ^{[4
]}

Schmid, A. K. ^{[3
]}

Lanzara, A. ^{[1
,2
]}

机构：

[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Natl Ctr Electron Microscopy, Berkeley, CA 94720 USA

[4] Univ Calif Berkeley, Lawrence Berkeley Lab, Adv Light Source, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 24期

基金：

美国国家科学基金会;

关键词：

band structure; carbon; doping; electron microscopy; monolayers; nanostructured materials; photoelectron spectra; quasiparticles; surface morphology;

D O I：

10.1063/1.3028015

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Self-doping in graphene has been studied by examining single-layer epitaxially grown graphene samples with differing characteristic lateral terrace widths. Low energy electron microscopy was used to gain real-space information about the graphene surface morphology, which was compared with data obtained by angle-resolved photoemission spectroscopy to study the effect of the monolayer graphene terrace width on the low energy dispersions. By altering the graphene terrace width, we report significant changes in the electronic structure and quasiparticle relaxation time of the material, in addition to a terrace width-dependent doping effect.

引用

页数：3

共 50 条

[21] Self-doping effects in cobalt silicide CoSi: Electrical, magnetic, elastic, and thermodynamic properties
Stishov, Sergei M.
Petrova, Alla E.
Sidorov, Vladimir A.
Menzel, Dirk
PHYSICAL REVIEW B, 2012, 86 (06)
[22] Understanding and control of bipolar self-doping in copper nitride
Fioretti, Angela N.
Schwartz, Craig P.
Vinson, John
Nordlund, Dennis
Prendergast, David
Tamboli, Adele C.
Caskey, Christopher M.
Tuomisto, Filip
Linez, Florence
Christensen, Steven T.
Toberer, Eric S.
Lany, Stephan
Zakutayev, Andriy
JOURNAL OF APPLIED PHYSICS, 2016, 119 (18)
[23] Self-Doping and Electrical Conductivity in Spinel Oxides: Experimental Validation of Doping Rules
Shi, Yezhou
Ndione, Paul F.
Lim, Linda Y.
Sokaras, Dimosthenis
Weng, Tsu-Chien
Nagaraja, Arpun R.
Karydas, Andreas G.
Perkins, John D.
Mason, Thomas O.
Ginley, David S.
Zunger, Alex
Toney, Michael F.
CHEMISTRY OF MATERIALS, 2014, 26 (05) : 1867 - 1873
[24] The effect of Si and Mg doping in the microstructure of epitaxially grown GaN
Katsikini, M
Paloura, EC
Fieber-Erdmann, M
Holub-Krappe, E
Moustakas, TD
NITRIDE SEMICONDUCTORS, 1998, 482 : 381 - 386
[25] Metal-insulator transitions due to self-doping
Blawid, S
Tuan, HA
Yanagisawa, T
Fulde, P
PHYSICAL REVIEW B, 1996, 54 (11): : 7771 - 7778
[26] Multiorbital antiferromagnetic metal induced by intramolecular self-doping
Takagi, Rina
Gangi, Hiro
Miyagawa, Kazuya
Nishibori, Eiji
Kasai, Hidetaka
Seo, Hitoshi
Zhou, Biao
Kobayashi, Akiko
Kanoda, Kazushi
PHYSICAL REVIEW RESEARCH, 2020, 2 (03):
[27] Sulfur-/Nitrogen-Rich Albumen Derived "Self-Doping" Graphene for Sodium-Ion Storage
Li, Siyuan
Li, Zeheng
Cao, Gaoyao
Ling, Min
Ji, Jiapeng
Zhao, Dian
Sha, Ying
Gao, Xuehui
Liang, Chengdu
CHEMISTRY-A EUROPEAN JOURNAL, 2019, 25 (63) : 14358 - 14363
[28] SELF-DOPING OF SILICON WITH BORON IN CHLORIDE EPITAXIAL GROWTH METHOD
SLADKOV, IB
TUCHKEVI.VV
SHMIDT, NM
DANCHIK, ME
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (12): : 2054 - &
[29] Synthetic approach for the control of self-doping in luminescent organic semiconductors
Kuimov, Anatoly D.
Becker, Christina S.
Shumilov, Nikita A.
Koskin, Igor P.
Sonina, Alina A.
Komarov, Vladislav Yu
Shundrina, Inna K.
Kazantsev, Maxim S.
MATERIALS CHEMISTRY FRONTIERS, 2022, 6 (16) : 2244 - 2255
[30] Carbon nanotube self-doping: Calculation of the hole carrier concentration
Rakitin, A
Papadopoulos, C
Xu, JM
PHYSICAL REVIEW B, 2003, 67 (03)

← 1 2 3 4 5 →