Self-doping effects in epitaxially grown graphene

被引：35
|
作者：
Siegel, D. A. [1 ,2 ]
Zhou, S. Y. [1 ,2 ]
El Gabaly, F. [3 ]
Fedorov, A. V. [4 ]
Schmid, A. K. [3 ]
Lanzara, A. [1 ,2 ]
机构：
[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Natl Ctr Electron Microscopy, Berkeley, CA 94720 USA
[4] Univ Calif Berkeley, Lawrence Berkeley Lab, Adv Light Source, Berkeley, CA 94720 USA
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 24期
基金：
美国国家科学基金会;
关键词：
band structure; carbon; doping; electron microscopy; monolayers; nanostructured materials; photoelectron spectra; quasiparticles; surface morphology;
D O I：
10.1063/1.3028015
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Self-doping in graphene has been studied by examining single-layer epitaxially grown graphene samples with differing characteristic lateral terrace widths. Low energy electron microscopy was used to gain real-space information about the graphene surface morphology, which was compared with data obtained by angle-resolved photoemission spectroscopy to study the effect of the monolayer graphene terrace width on the low energy dispersions. By altering the graphene terrace width, we report significant changes in the electronic structure and quasiparticle relaxation time of the material, in addition to a terrace width-dependent doping effect.
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页数：3
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