Tartaric Acid as a Complexing Agent for Selective Removal of Tantalum and Copper in CMP

被引：33

作者：

Janjam, S. V. S. B. ^{[1
]}

Peddeti, S. ^{[1
]}

Roy, D. ^{[2
]}

Babu, S. V. ^{[1
]}

机构：

[1] Clarkson Univ, Ctr Adv Mat Proc, Potsdam, NY 13699 USA

[2] Clarkson Univ, Dept Phys, Potsdam, NY 13699 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2008年 / 11卷 / 12期

关键词：

D O I：

10.1149/1.2980345

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This work demonstrates the utility of a tartaric acid-based slurry for chemical mechanical planarization (CMP) of tantalum and copper. Cu and Ta disks and wafers were polished at a pressure of 2 psi, and selective removal of the two metals was achieved by adjusting the pH of the slurry in the range 3.0-8.0. Changing the H(2)O(2) content of the slurry can further regulate the relative removal rates of Cu and Ta. Optical profilometry shows very good postpolish wafer surface quality. Possible mechanisms for the chemically promoted material removal are discussed. (C) 2008 The Electrochemical Society. [DOI: 10.1149/1.2980345] All rights reserved.

引用

页码：H327 / H330

页数：4

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