Photon-Gated Spin Transistor

被引：18
|
作者：
Li, Fan [1 ]
Song, Cheng [1 ]
Cui, Bin [1 ]
Peng, Jingjing [1 ]
Gu, Youdi [1 ]
Wang, Guangyue [1 ]
Pan, Feng [1 ]
机构：
[1] Tsinghua Univ, Key Lab Adv Mat MOE, Sch Mat Sci & Engn, Beijing 100084, Peoples R China
来源：
ADVANCED MATERIALS | 2017年 / 29卷 / 02期
基金：
中国国家自然科学基金;
关键词：
FIELD-EFFECT TRANSISTORS; MAGNETIZATION; TEMPERATURE; PULSES;
D O I：
10.1002/adma.201604052
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A new type of spin transistor with an optical gate is proposed with partial exposure of the device, where spin scattering is enhanced under light illumination due to the photon-induced minor spins. Consequently a reproducible transient gate operation of reisitance via optical methods is observed, as ascribed to the nature of spin excitation.
引用
收藏
页数：5
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