Photon-Gated Spin Transistor

被引：18

作者：

Li, Fan ^{[1
]}

Song, Cheng ^{[1
]}

Cui, Bin ^{[1
]}

Peng, Jingjing ^{[1
]}

Gu, Youdi ^{[1
]}

Wang, Guangyue ^{[1
]}

Pan, Feng ^{[1
]}

机构：

[1] Tsinghua Univ, Key Lab Adv Mat MOE, Sch Mat Sci & Engn, Beijing 100084, Peoples R China

来源：

ADVANCED MATERIALS | 2017年 / 29卷 / 02期

基金：

中国国家自然科学基金;

关键词：

FIELD-EFFECT TRANSISTORS; MAGNETIZATION; TEMPERATURE; PULSES;

D O I：

10.1002/adma.201604052

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A new type of spin transistor with an optical gate is proposed with partial exposure of the device, where spin scattering is enhanced under light illumination due to the photon-induced minor spins. Consequently a reproducible transient gate operation of reisitance via optical methods is observed, as ascribed to the nature of spin excitation.

引用

页数：5

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