Heavy p-type doping of ZnSe thin films using Cu2Se in pulsed laser deposition

被引：6

作者：

Zhang, Xiaojun ^{[1
,2
]}

Yu, Kin Man ^{[1
]}

Kronawitter, Coleman X. ^{[1
,2
]}

Ma, Zhixun ^{[1
]}

Yu, Peter Y. ^{[1
,3
]}

Mao, Samuel S. ^{[1
,2
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 04期

关键词：

MOLECULAR-BEAM EPITAXY; GROWTH; CONTACTS;

D O I：

10.1063/1.4739083

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Undoped, Cu-doped, Se-enriched, and Cu2Se-doped ZnSe films have been grown on fused quartz substrates by pulsed laser deposition. While the other films are highly resistive, Cu2Se-doped ZnSe films are p-type conducting with hole concentrations of similar to 1.1 x 10(19) cm(-3) and resistivities of similar to 0.098 Omega cm (compared with previous reports of similar to 1 x 10(18) cm(-3) and similar to 0.75 Omega cm). The exceptional heavy p-type doping of ZnSe films can be attributed to substitution of Zn atoms with Cu while limiting selenium-vacancy-associated compensating defects with additional selenium. This work is of importance to solve doping difficulties and contact problems of wide-bandgap semiconductors. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739083]

引用

页数：3

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