Heavy p-type doping of ZnSe thin films using Cu2Se in pulsed laser deposition

被引：6
|
作者：
Zhang, Xiaojun [1 ,2 ]
Yu, Kin Man [1 ]
Kronawitter, Coleman X. [1 ,2 ]
Ma, Zhixun [1 ]
Yu, Peter Y. [1 ,3 ]
Mao, Samuel S. [1 ,2 ]
机构：
[1] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 04期
关键词：
MOLECULAR-BEAM EPITAXY; GROWTH; CONTACTS;
D O I：
10.1063/1.4739083
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Undoped, Cu-doped, Se-enriched, and Cu2Se-doped ZnSe films have been grown on fused quartz substrates by pulsed laser deposition. While the other films are highly resistive, Cu2Se-doped ZnSe films are p-type conducting with hole concentrations of similar to 1.1 x 10(19) cm(-3) and resistivities of similar to 0.098 Omega cm (compared with previous reports of similar to 1 x 10(18) cm(-3) and similar to 0.75 Omega cm). The exceptional heavy p-type doping of ZnSe films can be attributed to substitution of Zn atoms with Cu while limiting selenium-vacancy-associated compensating defects with additional selenium. This work is of importance to solve doping difficulties and contact problems of wide-bandgap semiconductors. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739083]
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页数：3
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