Modeling of Radiation-Induced Charge Trapping in MOS Devices under Ionizing Irradiation

被引：3
|
作者：
Petukhov, M. A. [1 ]
Ryazanov, A. I. [1 ]
机构：
[1] Natl Res Ctr Kurchatov Inst, Pl Akad Kurchatova 1, Moscow 123182, Russia
来源：
PHYSICS OF ATOMIC NUCLEI | 2016年 / 79卷 / 14期
关键词：
modeling; ionizing irradiation; MOSFET; SIO2; LAYERS; INTERFACE; SILICON; STATES; RECOMBINATION; ELECTRONS; CAPTURE; CENTERS; OXIDES; PROTON;
D O I：
10.1134/S1063778816140179
中图分类号：
O57 [原子核物理学、高能物理学];
学科分类号：
070202 ;
摘要：
The numerical model of the radiation-induced charge trapping process in the oxide layer of a MOS device under ionizing irradiation is developed; the model includes carrier transport, hole capture by traps in different states, recombination of free electrons and trapped holes, kinetics of hydrogen ions which can be accumulated in the material during transistor manufacture, and accumulation and charging of interface states. Modeling of n-channel MOSFET behavior under 1 MeV photon irradiation is performed. The obtained dose dependences of the threshold voltage shift and its contributions from trapped holes and interface states are in good agreement with experimental data.
引用
收藏
页码：1571 / 1576
页数：6
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