Non-isothermal model experiments and numerical simulations for directional solidification of multicrystalline silicon in a traveling magnetic field

被引:27
|
作者
Dadzis, K. [1 ]
Niemietz, K. [2 ]
Paetzold, O. [2 ]
Wunderwald, U. [3 ]
Friedrich, J. [3 ,4 ]
机构
[1] SolarWorld Innovat GmbH, D-09599 Freiberg, Germany
[2] TU Bergakad Freiberg, Inst F NE Met & Reinststoffe, D-09599 Freiberg, Germany
[3] Fraunhofer THM, D-09599 Freiberg, Germany
[4] Fraunhofer IISB, Dept Crystal Growth, D-91058 Erlangen, Germany
关键词
Computer simulation; Fluid flows; Magnetic fields; Stirring; Bridgman technique; VERTICAL TEMPERATURE-GRADIENT; DRIVEN-CAVITY; FLOW; TRANSPORT; GROWTH; MELT;
D O I
10.1016/j.jcrysgro.2013.02.030
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
A new experimental setup containing a GaInSn melt with a square horizontal cross section of 10 x 10 cm(2) and a variable melt height up to 10 cm has been developed. The melt is positioned in the center of a coil system generating a traveling magnetic field (TMF). Using a cooling system at the bottom and a heating system at the top of the melt, a vertical temperature difference up to approximately 50 K can be applied to the melt, imitating the thermal conditions during the directional solidification of multicrystalline silicon. Direct measurements of the time-dependent velocity and the temperature profiles were performed using ultrasonic Doppler velocimetry and thermocouples, respectively. Complementary three-dimensional (3D) numerical simulations of the model experiments were used to validate the numerical tools and to gain a deeper insight into the characteristics of TMF flows in square melts. The classical toroidal flow structure known from isothermal cylindrical melts is shown to obtain a large horizontal central vortex at a small height of the square melt, whereas a distinct 3D asymmetry appears at a large height. A vertical temperature gradient tends to suppress the vertical melt motion and leads to new complex horizontal flow structures. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:145 / 156
页数:12
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