Understanding the Switching Mechanism in Transition Metal Oxide Based ReRAM Devices

被引：1
|
作者：
Jha, Rashmi [1 ]
Long, Branden [1 ]
机构：
[1] Univ Toledo, Dept Elect Engn & Comp Sci, Toledo, OH 43606 USA
来源：
2012 IEEE COMPUTER SOCIETY ANNUAL SYMPOSIUM ON VLSI (ISVLSI) | 2012年
关键词：
Resistive Random Access Memory (ReRAM); Transition Metal Oxide; Non-Volatile Memory; Filamentary Switching;
D O I：
10.1109/ISVLSI.2012.53
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper presents the switching characteristics of ReRAM devices fabricated using Ru as bottom electrode, HfO2 as the switching Transition Metal Oxide, and TiN as the top electrode. The devices demonstrated excellent endurance up to 10(6) cycles and retention up to 10(5) seconds. The Capacitance-Voltage characteristics were studied in conjunction with the Current-Voltage characteristics to understand the role of the compliance current in governing the filament dimensions and mechanism of switching.
引用
收藏
页码：73 / 77
页数：5
相关论文
共 50 条
  • [31] Binary metal oxide-based resistive switching memory devices: A status review
    Patil, Amitkumar R.
    Dongale, Tukaram D.
    Kamat, Rajanish K.
    Rajpure, Keshav Y.
    MATERIALS TODAY COMMUNICATIONS, 2023, 34
  • [32] Experimental Characterization of Switching Properties of ReRAM Devices by the Capacitance Measurements
    Costa, Fernando J.
    Zeinati, Aseel
    Trevisoli, Renan
    Misra, D.
    Doria, Rodrigo T.
    2023 37TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES, SBMICRO, 2023,
  • [33] Realizing a family of transition-metal-oxide memristors based on volatile resistive switching at a rectifying metal/oxide interface
    Yang, M.
    Qin, N.
    Ren, L. Z.
    Wang, Y. J.
    Yang, K. G.
    Yu, F. M.
    Zhou, W. Q.
    Meng, M.
    Wu, S. X.
    Bao, D. H.
    Li, S. W.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 47 (04)
  • [34] Analytical modelling of the transport in analog filamentary conductive-metal-oxide/HfOx ReRAM devices
    Falcone, Donato Francesco
    Menzel, Stephan
    Stecconi, Tommaso
    Galetta, Matteo
    La Porta, Antonio
    Offrein, Bert Jan
    Bragaglia, Valeria
    NANOSCALE HORIZONS, 2024, 9 (05) : 775 - 784
  • [35] Transition Metal Binary Oxides For ReRAM Applications
    Spiga, S.
    Lamperti, A.
    Cianci, E.
    Volpe, F. G.
    Fanciulli, M.
    PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 7, 2009, 25 (06): : 411 - 425
  • [36] A mechanism for unipolar resistance switching in oxide nonvolatile memory devices
    Sanchez, M. J.
    Rozenberg, M. J.
    Inoue, I. H.
    APPLIED PHYSICS LETTERS, 2007, 91 (25)
  • [37] Electroforming and switching in oxides of transition metals: The role of metal-insulator transition in the switching mechanism
    Chudnovskii, FA
    Odynets, LL
    Pergament, AL
    Stefanovich, GB
    JOURNAL OF SOLID STATE CHEMISTRY, 1996, 122 (01) : 95 - 99
  • [38] Electroforming and Switching in Oxides of Transition Metals: The Role of Metal-Insulator Transition in the Switching Mechanism
    Chudnovskii, F. A.
    Odynets, L. L.
    Pergament, A. L.
    Stefanovich, G. B.
    Journal of Solid State Chemistry, 122 (01):
  • [39] Filament observation in metal-oxide resistive switching devices
    Celano, Umberto
    Chen, Yang Yin
    Wouters, Dirk J.
    Groeseneken, Guido
    Jurczak, Malgorzata
    Vandervorst, Wilfried
    APPLIED PHYSICS LETTERS, 2013, 102 (12)
  • [40] Stable Bipolar Resistive Switching Characteristics and Resistive Switching Mechanisms Observed in Aluminum Nitride-based ReRAM Devices
    Kim, Hee-Dong
    An, Ho-Myoung
    Lee, Eui Bok
    Kim, Tae Geun
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (10) : 3566 - 3573
12345