Understanding the Switching Mechanism in Transition Metal Oxide Based ReRAM Devices

被引：1
|
作者：
Jha, Rashmi [1 ]
Long, Branden [1 ]
机构：
[1] Univ Toledo, Dept Elect Engn & Comp Sci, Toledo, OH 43606 USA
来源：
2012 IEEE COMPUTER SOCIETY ANNUAL SYMPOSIUM ON VLSI (ISVLSI) | 2012年
关键词：
Resistive Random Access Memory (ReRAM); Transition Metal Oxide; Non-Volatile Memory; Filamentary Switching;
D O I：
10.1109/ISVLSI.2012.53
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper presents the switching characteristics of ReRAM devices fabricated using Ru as bottom electrode, HfO2 as the switching Transition Metal Oxide, and TiN as the top electrode. The devices demonstrated excellent endurance up to 10(6) cycles and retention up to 10(5) seconds. The Capacitance-Voltage characteristics were studied in conjunction with the Current-Voltage characteristics to understand the role of the compliance current in governing the filament dimensions and mechanism of switching.
引用
收藏
页码：73 / 77
页数：5
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