Characterization of a Pixelated CdTe X-Ray Detector Using the Timepix Photon-Counting Readout Chip

被引:44
|
作者
Ruat, Marie [1 ]
Ponchut, Cyril [1 ]
机构
[1] European Synchrotron Radiat Facil, Detector Unit, F-38046 Grenoble, France
关键词
CdTe; pixelated area detector; semiconductor detector; single photon counting; synchrotron; Timepix chip; X-ray detector; X-ray diffraction; X-ray imaging; QUANTUM EFFICIENCY; PERFORMANCE; XPAD;
D O I
10.1109/TNS.2012.2210909
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A prototype 1mm thick CdTe detector bonded to a Timepix chip with 256*256 pixels at 55 mu m pitch was evaluated for use as a photon-counting imaging detector at high energy synchrotron beamlines (energy range 30-100 keV). A complete characterization of the system was performed. Powder diffraction experiments have also been conducted using a monochromatic beam at the ESRF. The expected gain in efficiency at energies above 30 keV with reference to silicon pixel detectors and current CCD systems of similar pixel size was demonstrated, together with an improved spatial resolution. Background-free powder diffraction spectra were obtained using the Timepix energy thresholding feature. The energy-resolved detection capabilities are limited by a strong charge sharing. The major limitations preventing a wider use of these devices at synchrotron X-ray sources are the lack of homogeneity of the CdTe crystal which exhibits numerous defects, and the unavailability of large fields of view.
引用
收藏
页码:2392 / 2401
页数:10
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