SYNTHESES OF NANOSTRUCTURE BUNDLES BASED ON SEMICONDUCTING METAL SILICIDES

被引:2
|
作者
Li, Wen [1 ]
Ishikawa, Daisuke [2 ]
Tatsuoka, Hirokazu [2 ]
机构
[1] Shizuoka Univ, Grad Sch Sci & Technol, Hamamatsu, Shizuoka 4328011, Japan
[2] Shizuoka Univ, Grad Sch Engn, Hamamatsu, Shizuoka 4328561, Japan
关键词
Silicides; nanowire; nanosheet; bundle; thermoelectric material; CHROMIUM DISILICIDE NANOWIRES; THERMOELECTRIC FIGURE; ELECTRICAL-PROPERTIES; GROWTH; LAYERS; CRSI2; MG2SIO4; DEPOSITION; MECHANISM; KINETICS;
D O I
10.1142/S1793604713400110
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A variety of nanostructure bundles and arrays based on semiconducting metal silicides have been synthesized using abundant and non-toxic starting materials. Three types of fabrication techniques of the nanostructure bundles or arrays, including direct growth, template synthesis using natural nanostructured materials and template synthesis using artificially fabricated nanostructured materials are demonstrated. CrSi2 nanowire bundles were directly grown by the exposure of Si substrates to CrCl2 vapor at atmospheric pressure. A hexagonal MoSi2 nanosheet, Mg2Si/MgO composite nanowire and Mg2Si nanowire bundles and MnSi1.7 nanowire array were synthesized using a MoS2 layered material, a SiOx nanofiber bundle, a Si nanowire array, and a Si nanowire array as the templates, respectively. Additionally, the fabrication phenomenon and structural properties of the nanostructured semiconducting metal silicides were investigated. These reactions provided the low-cost and controllable synthetic techniques to synthesize large scale and one-dimensional semiconducting metal silicides for thermoelectric applications.
引用
收藏
页数:10
相关论文
共 50 条
  • [21] Narrow-gap semiconducting silicides: the band structure
    Filonov, AB
    Migas, DB
    Shaposhnikov, VL
    Borisenko, VE
    Heinrich, A
    MICROELECTRONIC ENGINEERING, 2000, 50 (1-4) : 249 - 255
  • [22] SEMICONDUCTING SILICIDES - POTENTIAL MATERIALS FOR ELECTROOPTIC VLSI INTERCONNECTS
    BOST, MC
    MAHAN, JE
    JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (05) : 306 - 306
  • [23] Electronic properties of semiconducting silicides: fundamentals and recent predictions
    Ivanenko, LI
    Shaposhnikov, VL
    Filonov, AB
    Krivosheeva, AV
    Borisenka, VE
    Migas, DB
    Miglio, L
    Behr, G
    Schumann, J
    THIN SOLID FILMS, 2004, 461 (01) : 141 - 147
  • [24] Synthesis and nanostructure control of semiconducting polymers
    Ogino, Kenji
    Sato, Hisaya
    JOURNAL OF SYNTHETIC ORGANIC CHEMISTRY JAPAN, 2008, 66 (09) : 869 - 879
  • [25] EPITAXY OF METAL SILICIDES
    VONKANEL, H
    HENZ, J
    OSPELT, M
    HUGI, J
    MULLER, E
    ONDA, N
    GRUHLE, A
    THIN SOLID FILMS, 1990, 184 : 295 - 308
  • [26] ION-BEAM SYNTHESIS OF BURIED METALLIC AND SEMICONDUCTING SILICIDES
    MANTL, S
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 895 - 900
  • [27] Semiconducting Metal Oxides Based Gas Sensors
    Grossmann, Katharina
    Weimar, Udo
    Barsan, Nicolae
    OXIDE SEMICONDUCTORS, 2013, 88 : 261 - 282
  • [28] Semiconducting block copolymers -: synthesis and nanostructure formation
    Asawapirom, U
    Güntner, R
    Forster, M
    Scherf, U
    THIN SOLID FILMS, 2005, 477 (1-2) : 48 - 52
  • [29] Supersoft transition metal silicides
    Moroni, EG
    Podloucky, R
    Hafner, J
    PHYSICAL REVIEW LETTERS, 1998, 81 (09) : 1969 - 1972
  • [30] Development and applications of metal silicides
    Ma, Q
    Yan, BJ
    Kang, MK
    Yang, YQ
    RARE METAL MATERIALS AND ENGINEERING, 1999, 28 (01) : 10 - 13