Bifacial Shingle Solar Cells on p-Type Cz-Si (pSPEER)

被引：5
|
作者：
Baliozian, Puzant [1 ]
Lohmueller, Elmar [1 ]
Fellmeth, Tobias [1 ]
Woehrle, Nico [1 ]
Krieg, Alexander [1 ]
Preu, Ralf [1 ]
机构：
[1] Fraunhofer Inst Solar Energy Syst ISE, Heidenhofstr 2, D-79110 Freiburg, Germany
来源：
SILICONPV 2018: THE 8TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS | 2018年 / 1999卷
关键词：
D O I：
10.1063/1.5049311
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The concepts of bifaciality and shingling interconnection allow for a boost in output power density p(out) for silicon-based photovoltaic modules. This work examines silicon-based, bifacial shingle solar cells called "p-type shingled passivated edge, emitter, and rear (pSPEER)". A specially designed shingle metallization layout on industrial 6-inch p-type Czochralski-grown silicon precursors is contact fired to obtain the host wafer. Six pSPEER cells each of an area of 23 mm x 148 mm are obtained by a newly integrated thermal laser separation step, leaving a very smooth edge for the singulated pSPEER cells. The peak front side output power density is p(out, f) = 20.8 mW/ cm(2) (equivalent to a peak energy conversion efficiency eta = 20.8% under standard test conditions). A total output power density p(out) = 21.9 mW/ cm(2) is attained by assuming an additional rear irradiance of 100 W/m(2).
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页数：6
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