Bifacial Shingle Solar Cells on p-Type Cz-Si (pSPEER)

The concepts of bifaciality and shingling interconnection allow for a boost in output power density p(out) for silicon-based photovoltaic modules. This work examines silicon-based, bifacial shingle solar cells called "p-type shingled passivated edge, emitter, and rear (pSPEER)". A specially designed shingle metallization layout on industrial 6-inch p-type Czochralski-grown silicon precursors is contact fired to obtain the host wafer. Six pSPEER cells each of an area of 23 mm x 148 mm are obtained by a newly integrated thermal laser separation step, leaving a very smooth edge for the singulated pSPEER cells. The peak front side output power density is p(out, f) = 20.8 mW/ cm(2) (equivalent to a peak energy conversion efficiency eta = 20.8% under standard test conditions). A total output power density p(out) = 21.9 mW/ cm(2) is attained by assuming an additional rear irradiance of 100 W/m(2).