High Enhancement in Light Output of InGaN-based Micro-hole Array LEDs by Photoelectrochemical (PEC) Oxidation

被引：0

作者：

Lai, Fang-, I ^{[1
]}

Lin, S. G. ^{[2
]}

Hsieh, C. E. ^{[2
]}

Kuo, H. C. ^{[2
]}

Lu, T. C. ^{[2
]}

Wang, S. C. ^{[2
]}

机构：

[1] Yuan Ze Univ, Dept Elect Engn, Tao Yuan 320, Taiwan

[2] Natl Chiao Tung Univ, Dept Photon Inst Electroopt Engn, Hsinchu 300, Taiwan

来源：

2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9 | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaN micro-hole-array LEDs (mu-LEDs) with and without oxide-film on it were fabricated. Compared with conventional LED, output power of mu-LEDs without and with oxide film have enhancement of 38% and 82% at 20 mA, respectively. (C)2008 Optical Society of America

引用

页码：2255 / +

页数：2