High Enhancement in Light Output of InGaN-based Micro-hole Array LEDs by Photoelectrochemical (PEC) Oxidation

被引：0
|
作者：
Lai, Fang-, I [1 ]
Lin, S. G. [2 ]
Hsieh, C. E. [2 ]
Kuo, H. C. [2 ]
Lu, T. C. [2 ]
Wang, S. C. [2 ]
机构：
[1] Yuan Ze Univ, Dept Elect Engn, Tao Yuan 320, Taiwan
[2] Natl Chiao Tung Univ, Dept Photon Inst Electroopt Engn, Hsinchu 300, Taiwan
来源：
2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9 | 2008年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InGaN micro-hole-array LEDs (mu-LEDs) with and without oxide-film on it were fabricated. Compared with conventional LED, output power of mu-LEDs without and with oxide film have enhancement of 38% and 82% at 20 mA, respectively. (C)2008 Optical Society of America
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页码：2255 / +
页数：2
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