Effects of Atmosphere and Ultraviolet Light Irradiation on Chemical Mechanical Polishing Characteristics of SiC Wafers

被引：12

作者：

Ohnishi, Osamu ^{[1
]}

Doi, Toshiro ^{[1
]}

Kurokawa, Syuhei ^{[1
]}

Yamazaki, Tsutomu ^{[1
]}

Uneda, Michio ^{[1
,2
]}

Yin, Tao ^{[1
]}

Koshiyama, Isamu ^{[3
]}

Ichikawa, Koichiro ^{[4
]}

Aida, Hideo ^{[5
]}

机构：

[1] Kyushu Univ, Fukuoka 8190395, Japan

[2] Kanazawa Inst Technol, Haku San, Ishikawa 9240838, Japan

[3] Koshiyama Sci & Technol Fdn, Gifu 5090108, Japan

[4] Fujikoshi Machinery Corp, Nagano 3811233, Japan

[5] Namiki Precis Jewel Co Ltd, Adachi Ku, Tokyo 1238511, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 05期

基金：

日本学术振兴会;

关键词：

D O I：

10.1143/JJAP.51.05EF05

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To establish a high-efficiency and high-quality polishing process by controlling the workpiece environment, a prototype chemical mechanical polishing (CMP) machine that can perform double-side CMP simultaneously in a sealed pressure chamber was developed. Using this new machine, polishing experiments on single crystalline silicon carbide (SiC) wafers were carried out. The results showed that applying a highly pressurized O-2 gas and ultraviolet light irradiation were effective in SiC CMP. (C) 2012 The Japan Society of Applied Physics

引用

页数：2

共 50 条

[41] Spectral analyses of the impact of nanotopography of silicon wafers on oxide chemical mechanical polishing
Park, J.-G.
Katoh, T.
Yoo, H.-C.
Park, J.-H.
Japanese Journal of Applied Physics, Part 2: Letters, 2001, 40 (8 B):
[42] Simultaneous temperature measurement of wafers in chemical mechanical polishing of silicon dioxide layer
Sugimoto, F
Arimoto, Y
Ito, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (12A): : 6314 - 6320
[43] Chemical mechanical polishing of silicon wafers: Finite element analysis of wafer flatness
Zhang, X. H.
Pei, Z. J.
Fisher, Graham R.
Manufacturing Engineering and Materials Handling, 2005 Pts A and B, 2005, 16 : 893 - 900
[44] Study on the Surface Characteristics of Polishing Pad Used in Chemical Mechanical Polishing
Gao, Hong
Su, Jianxiu
DIGITAL DESIGN AND MANUFACTURING TECHNOLOGY, PTS 1 AND 2, 2010, 102-104 : 724 - +
[45] Characteristics in chemical-mechanical polishing of copper: Comparison of polishing pads
Stavreva, Z
Zeidler, D
Plotner, M
Drescher, K
APPLIED SURFACE SCIENCE, 1997, 108 (01) : 39 - 44
[46] A chemical mechanical polishing model incorporating both the chemical and mechanical effects
Qin, K
Moudgil, B
Park, CW
THIN SOLID FILMS, 2004, 446 (02) : 277 - 286
[47] Effect of chemical reaction rate in ultraviolet photocatalytic auxiliary sic polishing process
Lu, Jia-Bin
Xiong, Qiang
Yan, Qiu-Sheng
Wang, Xin
Liao, Bo-Tao
Surface Technology, 2019, 48 (11): : 148 - 158
[48] Effects of polishing pressure on electrochemical characteristics of silicon wafers during CMP
Song, Xiaolan
Yang, Haiping
Liu, Hongyan
Zhang, Xiaowei
Qiu, Guanzhou
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (04) : D323 - D326
[49] Heat and its effects to chemical mechanical polishing
Kwon, Daehee
Kim, Hyoungjae
Jeong, Haedo
JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 2006, 178 (1-3) : 82 - 87
[50] The effects of particle adhesion in chemical mechanical polishing
Lu, ZY
Babu, SV
Matijevic, E
CHEMICAL-MECHANICAL PLANARIZATION, 2003, 767 : 167 - 172

← 1 2 3 4 5 →