Effects of Atmosphere and Ultraviolet Light Irradiation on Chemical Mechanical Polishing Characteristics of SiC Wafers

被引：12

作者：

Ohnishi, Osamu ^{[1
]}

Doi, Toshiro ^{[1
]}

Kurokawa, Syuhei ^{[1
]}

Yamazaki, Tsutomu ^{[1
]}

Uneda, Michio ^{[1
,2
]}

Yin, Tao ^{[1
]}

Koshiyama, Isamu ^{[3
]}

Ichikawa, Koichiro ^{[4
]}

Aida, Hideo ^{[5
]}

机构：

[1] Kyushu Univ, Fukuoka 8190395, Japan

[2] Kanazawa Inst Technol, Haku San, Ishikawa 9240838, Japan

[3] Koshiyama Sci & Technol Fdn, Gifu 5090108, Japan

[4] Fujikoshi Machinery Corp, Nagano 3811233, Japan

[5] Namiki Precis Jewel Co Ltd, Adachi Ku, Tokyo 1238511, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 05期

基金：

日本学术振兴会;

关键词：

D O I：

10.1143/JJAP.51.05EF05

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To establish a high-efficiency and high-quality polishing process by controlling the workpiece environment, a prototype chemical mechanical polishing (CMP) machine that can perform double-side CMP simultaneously in a sealed pressure chamber was developed. Using this new machine, polishing experiments on single crystalline silicon carbide (SiC) wafers were carried out. The results showed that applying a highly pressurized O-2 gas and ultraviolet light irradiation were effective in SiC CMP. (C) 2012 The Japan Society of Applied Physics

引用

页数：2

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