Point defect creation by proton and carbon irradiation of α-Ga2O3

被引：13

作者：

Polyakov, Alexander Y. ^{[1
]}

Nikolaev, Vladimir, I ^{[2
,3
]}

Meshkov, Igor N. ^{[4
]}

Siemek, Krzysztof ^{[4
,10
]}

Lagov, Petr B. ^{[1
,5
]}

Yakimov, Eugene B. ^{[1
,6
]}

Pechnikov, Alexei, I ^{[2
,3
]}

Orlov, Oleg S. ^{[4
]}

Sidorin, Alexey A. ^{[4
]}

Stepanov, Sergey, I ^{[2
,3
]}

Shchemerov, Ivan, V ^{[1
]}

Vasilev, Anton A. ^{[1
]}

Chernykh, Alexey, V ^{[1
]}

Losev, Anton A. ^{[7
]}

Miliachenko, Alexandr D. ^{[7
]}

Khrisanov, Igor A. ^{[7
]}

Pavlov, Yu S. ^{[5
]}

Kobets, U. A. ^{[8
]}

Pearton, Stephen J. ^{[9
]}

机构：

[1] Natl Univ Sci & Technol MISiS, Leninsky Pr 4, Moscow 119049, Russia

[2] Ioffe Inst, 26 Polytekhnicheskaya Str, St Petersburg 194021, Russia

[3] Perfect Crystals LLC, 28 Politekhnicheskaya Str, St Petersburg 194064, Russia

[4] Joint Inst Nucl Res, Joliot Curie 6, Moscow 141980, Russia

[5] Russian Acad Sci IPCE RAS, Lab Radiat Technol, AN Frumkin Inst Phys Chem & Electrochem, Moscow 119071, Russia

[6] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, 6 Academician Ossipyan Str, Chernogolovka 142432, Moscow Region, Russia

[7] NRC, Kurchatov Inst, Inst Theoret & Expt Phys, B Cheremushkinskaya 25, Moscow 117218, Russia

[8] Inst Phys & Power Engn, Bondarenko Sq 1, Obninsk 249033, Russia

[9] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[10] Polish Acad Sci, Inst Nucl Phys, PL-31342 Krakow, Poland

来源：

JOURNAL OF APPLIED PHYSICS | 2022年 / 132卷 / 03期

基金：

美国国家科学基金会;

关键词：

SPECTROSCOPY;

D O I：

10.1063/5.0100359

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Films of alpha-Ga2O3 grown by Halide Vapor Phase Epitaxy (HVPE) were irradiated with protons at energies of 330, 400, and 460 keV with fluences 6 x 10(15) cm(-2) and with 7 MeV C4+ ions with a fluence of 1.3 x 10(13) cm(-2) and characterized by a suite of measurements, including Photoinduced Transient Current Spectroscopy (PICTS), Thermally Stimulated Current (TSC), Microcathodoluminescence (MCL), Capacitance-frequency (C-f), photocapacitance and Admittance Spectroscopy (AS), as well as by Positron Annihilation Spectroscopy (PAS). Proton irradiation creates a conducting layer near the peak of the ion distribution and vacancy defects distribution and introduces deep traps at E-c-0.25, 0.8, and 1.4 eV associated with Ga interstitials, gallium-oxygen divacancies V-Ga-V-O, and oxygen vacancies V-O. Similar defects were observed in C implanted samples. The PAS results can also be interpreted by assuming that the observed changes are due to the introduction of V-Ga and V-Ga-V-O.

引用

页数：9

共 50 条

[1] Proton irradiation Of Ga2O3 Schottky diodes and NiO/Ga2O3 heterojunctions
Polyakov, Alexander Y.
Saranin, Danila S.
Shchemerov, Ivan V.
Vasilev, Anton A.
Romanov, Andrei A.
Kochkova, Anastasiia I.
Gostischev, Pavel
Chernykh, Alexey V.
Alexanyan, Luiza A.
Matros, Nikolay R.
Lagov, Petr B.
Doroshkevich, Aleksandr S.
Isayev, Rafael Sh.
Pavlov, Yu. S.
Kislyuk, Alexander M.
Yakimov, Eugene B.
Pearton, Stephen J.
SCIENTIFIC REPORTS, 2024, 14 (01):
[2] Proton Irradiation Effects in MOCVD Grown β-Ga2O3 and ε-Ga2O3 Thin Films
Yue, Jian-Ying
Li, Shan
Qi, Song
Ji, Xue-Qiang
Wu, Zhen-Ping
Li, Pei-Gang
Tang, Wei-Hua
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2024, 71 (01) : 67 - 71
[3] Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage
Polyakov, A. Y.
Smirnov, N. B.
Shchemerov, I. V.
Yakimov, E. B.
Yang, Jiancheng
Ren, F.
Yang, Gwangseok
Kim, Jihyun
Kuramata, A.
Pearton, S. J.
APPLIED PHYSICS LETTERS, 2018, 112 (03)
[4] Point defect localization and cathodoluminescence emission in undoped ε-Ga2O3
Hidouri, Tarek
Parisini, Antonella
Dadgostar, S.
Jimenez, J.
Fornari, R.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2022, 55 (29)
[5] Point defects in Ga2O3
McCluskey, Matthew D.
JOURNAL OF APPLIED PHYSICS, 2020, 127 (10)
[6] Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3
Ingebrigtsen, M. E.
Kuznetsov, A. Yu.
Svensson, B. G.
Alfieri, G.
Mihaila, A.
Badstubner, U.
Perron, A.
Vines, L.
Varley, J. B.
APL MATERIALS, 2019, 7 (02)
[7] Enhancing the luminescence yield of Cr3+ in β-Ga2O3 by proton irradiation
Peres, M.
M. Esteves, D.
Teixeira, B. M. S.
Zanoni, J.
Alves, L. C.
Alves, E.
Santos, L. F.
Biquard, X.
Jia, Z.
Mu, W.
Rodrigues, J.
Sobolev, N. A.
Correia, M. R.
Monteiro, T.
Ben Sedrine, N.
Lorenz, K.
APPLIED PHYSICS LETTERS, 2022, 120 (26)
[8] Effect of Electron Irradiation and Defect Analysis of β-Ga2O3 Schottky Barrier Diodes
Zhang, Zhengliang
Wang, Tianqi
Xiao, Liyi
Liu, Chaoming
Zhou, Jiaming
Zhang, Yanqing
Qi, Chunhua
Ma, Guoliang
Huo, Mingxue
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (03) : 1676 - 1680
[9] Proton irradiation induced defects in β-Ga2O3: A combined EPR and theory study
von Bardeleben, Hans Juergen
Zhou, Shengqiang
Gerstmann, Uwe
Skachkov, Dmitry
Lambrecht, Walter R. L.
Quoc Duy Ho
Deak, Peter
APL MATERIALS, 2019, 7 (02):
[10] Effect of 5 MeV proton irradiation damage on performance of β-Ga2O3 photodetectors
Ahn, Shihyun
Lin, Yi-Hsuan
Ren, Fan
Oh, Sooyeoun
Jung, Younghun
Yang, Gwangseok
Kim, Jihyun
Mastro, Michael A.
Hite, Jennifer K.
Eddy, Charles R., Jr.
Pearton, Stephen J.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2016, 34 (04):

← 1 2 3 4 5 →