Effects of Microwave Annealing on Nitrogenated Amorphous In-Ga-Zn-O Thin-Film Transistor for Low Thermal Budget Process Application

被引：62

作者：

Fuh, Chur-Shyang ^{[1
,2
]}

Liu, Po-Tsun ^{[3
,4
]}

Teng, Li-Feng ^{[3
,5
]}

Huang, Sih-Wei ^{[3
,4
]}

Lee, Yao-Jen ^{[6
]}

Shieh, Han-Ping D. ^{[3
,4
]}

Sze, Simon M. ^{[1
,2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan

[3] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan

[4] Natl Chiao Tung Univ, Display Inst, Hsinchu 30010, Taiwan

[5] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan

[6] Natl Nano Device Labs, Hsinchu 30010, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 09期

关键词：

Flexible thin-film transistor (TFT); In-Ga-Zn-O thin-film transistor (IGZO TFT); postannealing;

D O I：

10.1109/LED.2013.2272311

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, microwave annealing technology is proposed to reduce thermal budget for the manufacture of transparent conductive oxide thin-film transistor (TFT). With microwave annealing, a nitrogenated amorphous In-Ga-Zn-O (a-IGZO:N) TFT fabricated on glass panel behaves as a carrier mobility of 4.21 cm(2)/V s and threshold voltage of 2.91 V. The performance of microwave-treated a-IGZO: N TFT with annealing process duration of 300 s is well competitive with its counterpart treated by thermal furnace annealing at 350 C for 1 h. Owing to its low thermal budget and selective heating to materials of interest, the microwave annealing has great potential for flexible oxide TFT applications.

引用

页码：1157 / 1159

页数：3

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