Analytical modelling of threshold voltage and drain current in short channel fully depleted cylindrical gate MOSFET

被引：0

作者：

Gupta, PS ^{[1
]}

Kranti, A ^{[1
]}

Haldar, S ^{[1
]}

机构：

[1] Univ Delhi, Semicond Devices Res Lab, New Delhi 110021, India

来源：

PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II | 2000年 / 3975卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the present paper atl analytical model of threshold voltage and current voltage characteristics for a fully depleted short channel cylindrical gate MOSFET is developed. The analysis takes into account field dependent mobility, velocity saturation and source and drain resistance. Advantages of cylindrical structure over the conventional structure are also investigated and the results so obtained are in good agreement with experimental data.

引用

页码：475 / 482

页数：8

共 50 条

[1] Analytical model for threshold voltage and I-V characteristics of fully depleted short channel cylindrical/surrounding gate MOSFET
Kranti, A
Haldar, S
Gupta, RS
MICROELECTRONIC ENGINEERING, 2001, 56 (3-4) : 241 - 259
[2] Two-Dimensional Analytical Model for Deriving the Threshold Voltage of a Short Channel Fully Depleted Cylindrical/Surrounding Gate MOSFET
Suh, Chung Ha
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2011, 11 (02) : 111 - 120
[3] Analytical 2D modeling for potential distribution and threshold voltage of the short channel fully depleted cylindrical/surrounding gate MOSFET
Aouaj, A
Bouziane, A
Nouaçry, A
INTERNATIONAL JOURNAL OF ELECTRONICS, 2005, 92 (08) : 437 - 443
[4] An analytical drain current model for graded channel cylindrical/surrounding gate MOSFET
Kaur, Harsupreet
Kabra, Sneha
Haldar, Subhasis
Gupta, R. S.
MICROELECTRONICS JOURNAL, 2007, 38 (03) : 352 - 359
[5] Analytical modelling of threshold voltage for underlap Fully Depleted Silicon-On-Insulator MOSFET
Sharma, Rajneesh
Rana, Ashwani K.
INTERNATIONAL JOURNAL OF ELECTRONICS, 2017, 104 (02) : 286 - 296
[6] Analytical Study of Short Channel Effects in Fully Depleted Double Gate and Cylindrical Gate Mosfets
Aouaj, Abdellah
JOURNAL OF ACTIVE AND PASSIVE ELECTRONIC DEVICES, 2010, 5 (1-2): : 121 - 127
[7] Derivation of threshold voltage and drain current for cylindrical MOSFET and application to a recessed MOSFET
Ananthan, Venkat
Yang, Rongsheng
Mouli, Chandra
2008 IEEE WORKSHOP ON MICROELECTRONICS AND ELECTRON DEVICES (WMED), 2008, : 9 - 11
[8] Analytical Drain Current Model for Fully Depleted Surrounding Gate TFET
Usha, C.
Vimala, P.
JOURNAL OF NANO RESEARCH, 2018, 55 : 75 - 81
[9] A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET
Shweta Tripathi
Chinese Physics B, 2014, 23 (11) : 624 - 629
[10] A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET
Tripathi, Shweta
CHINESE PHYSICS B, 2014, 23 (11)

← 1 2 3 4 5 →