Electrically pumped, waveguide-coupled Si light emitting diodes

被引：0

作者：

Buckley, S. M. ^{[1
]}

Stevens, M. J. ^{[1
]}

Nam, S. W. ^{[1
]}

Mirin, R. P. ^{[1
]}

Shainline, J. M. ^{[1
]}

机构：

[1] NIST, 325 Broadway, Boulder, CO 80305 USA

来源：

2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2017年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe fabrication and testing of LEDs based on emissive defect centers in Si and discuss our progress toward low-temperature on-chip integrated sources and detectors.

引用

页数：2

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