Electrically pumped, waveguide-coupled Si light emitting diodes

被引：0
|
作者：
Buckley, S. M. [1 ]
Stevens, M. J. [1 ]
Nam, S. W. [1 ]
Mirin, R. P. [1 ]
Shainline, J. M. [1 ]
机构：
[1] NIST, 325 Broadway, Boulder, CO 80305 USA
来源：
2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2017年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We describe fabrication and testing of LEDs based on emissive defect centers in Si and discuss our progress toward low-temperature on-chip integrated sources and detectors.
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页数：2
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