Selective area oxidation of Si3N4 with an ambient scanning tunneling microscope

被引：6
|
作者：
Day, HC
Allee, DR
机构：
[1] Department of Electrical Engineering, Arizona State University, Tempe
来源：
NANOTECHNOLOGY | 1996年 / 7卷 / 02期
关键词：
D O I：
10.1088/0957-4484/7/2/002
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A scanning tunneling microscope tip has been used to selectively write oxidation patterns on a thin Si3N4 film on p(+) silicon. After etching the patterns in hydrofluoric acid, trenches are observed, consistent with silicon consumption in the oxidation process. The patterns in the nitride film could be transferred to the underlying silicon with an ammonium fluoride etch.
引用
收藏
页码：106 / 109
页数：4
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