Fabrication and Characterization of Light-Emitting Diodes Comprising Highly Ordered Arrays of Emissive InGaN/GaN Nanorods

被引：15
|
作者：
Zhuang, Yi Ding [1 ]
Lewins, Christopher John [1 ]
Lis, Szymon [1 ]
Shields, Philip A. [1 ]
Allsopp, Duncan W. E. [1 ]
机构：
[1] Univ Bath, Dept Elect & Elect Engn, Bath BA2 7AY, Avon, England
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2013年 / 25卷 / 11期
基金：
英国工程与自然科学研究理事会;
关键词：
Gallium Nitride (GaN); light emitting diode (LED); nanorod LED;
D O I：
10.1109/LPT.2013.2259807
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A simple approach to fabricating ordered InGaN/GaN nanorod arrays light-emitting diodes (LEDs) with strongly directional light emission is reported. The far field radiation pattern of the nanorod arrays LEDs shows preferential emission in a +/- 10 degrees cone about the surface normal and contained other features arising from diffraction associated with the periodicity of the nanorod array. The output power per unit in-plane emissive area at 300-mA drive current is three times larger than that of an equivalent planar LED.
引用
收藏
页码：1047 / 1049
页数：3
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