Fabrication and Characterization of Light-Emitting Diodes Comprising Highly Ordered Arrays of Emissive InGaN/GaN Nanorods

被引：15

作者：

Zhuang, Yi Ding ^{[1
]}

Lewins, Christopher John ^{[1
]}

Lis, Szymon ^{[1
]}

Shields, Philip A. ^{[1
]}

Allsopp, Duncan W. E. ^{[1
]}

机构：

[1] Univ Bath, Dept Elect & Elect Engn, Bath BA2 7AY, Avon, England

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2013年 / 25卷 / 11期

基金：

英国工程与自然科学研究理事会;

关键词：

Gallium Nitride (GaN); light emitting diode (LED); nanorod LED;

D O I：

10.1109/LPT.2013.2259807

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple approach to fabricating ordered InGaN/GaN nanorod arrays light-emitting diodes (LEDs) with strongly directional light emission is reported. The far field radiation pattern of the nanorod arrays LEDs shows preferential emission in a +/- 10 degrees cone about the surface normal and contained other features arising from diffraction associated with the periodicity of the nanorod array. The output power per unit in-plane emissive area at 300-mA drive current is three times larger than that of an equivalent planar LED.

引用

页码：1047 / 1049

页数：3

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