RSDFT-NEGF Quantum Transport Simulation of Ultra-Small Field-Effect Transistors

被引：0

作者：

Mori, Nobuya ^{[1
]}

Mil'nikov, Gennady ^{[1
]}

Iwata, Jun-ichi ^{[2
]}

Oshiyama, Atsushi ^{[3
]}

机构：

[1] Osaka Univ, Suita, Osaka 5650871, Japan

[2] AdvanceSoft Corp, Chiyoda Ku, Tokyo 1010062, Japan

[3] Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

来源：

2020 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2020) | 2020年

关键词：

Device Simulation; Quantum Transport; MOSFET; NEGF; RSDFT;

D O I：

10.1109/edtm47692.2020.9117827

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe our recent progress in developing a non-equilibrium Green's function (NEGF) quantum transport simulator based on the real-space density functional theory (RSDFT). The simulator is implemented with the R-matrix theory and the low-dimensional equivalent model (EM), which substantially reduce the computational burden and make it possible to simulate the transport characteristics of realistic semiconductor devices from the first-principles. The simulator can incorporate non-equilibrium polarization charge effects by using the EM method to construct a piece-wise EM representation for a wide energy range of the RSDFT Hamiltonian. Numerical examples of transfer characteristics have shown for Si and Ge nanosheet field-effect transistors (FETs) and Si nanowire FETs.

引用

页数：3

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