5-GHz Band SiGe HBT Linear Power Amplifier IC With Novel CMOS Active Bias Circuit For WLAN Applications

被引：0
|
作者：
Yang, Xin [1 ]
Sugiura, Tsuyoshi [2 ]
Otani, Norihisa [2 ]
Murakami, Tadamasa [2 ]
Otobe, Eiichiro [2 ]
Yoshimasu, Toshihiko [1 ]
机构：
[1] Waseda Univ, Grad Sch Informat Prod & Syst, Wakamatsu Ku, Kitakyushu, Fukuoka 8080135, Japan
[2] Samsung R&D Inst Japan, ET Ctr, Tsurumi Ku, Yokohama, Kanagawa 2300027, Japan
来源：
2014 9TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE (EUMIC) | 2014年
关键词：
Linear power amplifier; SiGe BiCMOS; CMOS active bias circuit; WLAN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a highly linear 5-GHz band power amplifier IC with integrated novel CMOS active bias circuit in SiGe BiCMOS technology for wireless LAN applications. The power amplifier IC consists of three-stage amplifier, the CMOS active bias circuit for linearizing SiGe HBT and all matching circuits. The power amplifier IC has exhibited a measured output power of 17.0 dBm, an EVM of 0.9 % and a dc current consumption of 284 mA under 54 Mbps OFDM signal at 5.4 GHz.
引用
收藏
页码：428 / 431
页数：4
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