A 2.4-GHz SiGe HBT power amplifier with bias current controlling circuit

被引：1
|
作者：
彭艳军 [1 ,2 ]
宋家友 [1 ,3 ]
王志功 [1 ]
曾剑锋 [2 ]
机构：
[1] Institute of RF-& OE-ICs,Southeast University
[2] Department of Electronic Engineering,City University of Hong Kong
[3] School of Information Engineering,Zhengzhou University
来源：
半导体学报 | 2009年 / 30卷 / 05期
关键词：
power amplifier; SiGe HBT; bias circuit;
D O I：
暂无
中图分类号：
TN386 [场效应器件];
学科分类号：
摘要：
A 2.4-GHz SiGe HBT power amplifier(PA)with a novel bias current controlling circuit has been realized in IBM 0.35-μm SiGe BiCMOS technology,BiCMOS5PAe.The bias circuit switches the quiescent current to make the PA operate in a high or low power mode.Under a single supply voltage of +3.5V,the two-stage mode-switchable power amplifier provides a PAE improvement up to 56.7% and 19.2% at an output power of 0 and 20dBm,respec-tively,with a reduced quiescent current in the low power mode as compared to only operating the PA in the high power mode.The die size is only 1.32×1.37mm2.
引用
收藏
页码：96 / 98
页数：3
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