A 2.4-GHz SiGe HBT power amplifier with bias current controlling circuit

被引：1
|
作者：
彭艳军 [1 ,2 ]
宋家友 [1 ,3 ]
王志功 [1 ]
曾剑锋 [2 ]
机构：
[1] Institute of RF-& OE-ICs,Southeast University
[2] Department of Electronic Engineering,City University of Hong Kong
[3] School of Information Engineering,Zhengzhou University
来源：
半导体学报 | 2009年 / 30卷 / 05期
关键词：
power amplifier; SiGe HBT; bias circuit;
D O I：
暂无
中图分类号：
TN386 [场效应器件];
学科分类号：
摘要：
A 2.4-GHz SiGe HBT power amplifier(PA)with a novel bias current controlling circuit has been realized in IBM 0.35-μm SiGe BiCMOS technology,BiCMOS5PAe.The bias circuit switches the quiescent current to make the PA operate in a high or low power mode.Under a single supply voltage of +3.5V,the two-stage mode-switchable power amplifier provides a PAE improvement up to 56.7% and 19.2% at an output power of 0 and 20dBm,respec-tively,with a reduced quiescent current in the low power mode as compared to only operating the PA in the high power mode.The die size is only 1.32×1.37mm2.
引用
收藏
页码：96 / 98
页数：3
相关论文
共 50 条
  • [41] High P1dB and low quiescent current SiGe HBT power amplifier MMIC using self base bias control circuit for 5.8GHz ETC terminals
    Shinjo, S
    Ueda, H
    Sugano, T
    Nakanishi, M
    2003 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2003, : 195 - 198
  • [42] A Class-AB 0.8GHz-2.1GHz SiGe HBT Broadband Power Amplifier
    Li Wenyuan
    Bian Miaomiao
    Wang Zhigong
    2013 INTERNATIONAL CONFERENCE ON ADVANCED TECHNOLOGIES FOR COMMUNICATIONS (ATC), 2013, : 704 - 707
  • [43] A 60 GHz 18 dBm Power Amplifier Utilizing 0.25 μm SiGe HBT
    Hamidian, Amin
    Subramanian, Viswanathan
    Doerner, Ralf
    Boeck, Georg
    40TH EUROPEAN MICROWAVE CONFERENCE, 2010, : 1686 - 1689
  • [44] Study of 130 nm SiGe HBT Periphery in the Design of 160 GHz Power Amplifier
    Ali, Abdul
    Cipriani, Elisa
    Johansen, Tom Keinicke
    Colantonio, Paolo
    2018 FIRST INTERNATIONAL WORKSHOP ON MOBILE TERAHERTZ SYSTEMS (IWMTS), 2018,
  • [45] A 60 GHz 18 dBm Power Amplifier Utilizing 0.25 μm SiGe HBT
    Hamidian, Amin
    Subramanian, Viswanathan
    Doerner, Ralf
    Boeck, Georg
    2010 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2010, : 444 - 447
  • [46] Design and optimization of a high efficiency 60 GHz SiGe-HBT power amplifier
    Do, Van-Hoang
    Subramanian, Viswanathan
    Keusgen, Wilhelm
    Boeck, Georg
    2007 IEEE INTERNATIONAL WORKSHOP ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY, PROCEEDINGS: ENABLING TECHNOLOGIES FOR EMERGING WIRELESS SYSTEMS, 2007, : 150 - +
  • [47] A monolithic 24 GHz, 20 dBm, 14% PAE SiGe HBT power amplifier
    Comeau, Jonathan P.
    Andrews, Joel M.
    Cressler, John D.
    2006 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-4, 2006, : 241 - +
  • [48] A High-Linearity GaN-on-Si Power Amplifier for 2.4-GHz WLAN Applications
    Meng, Chinchun
    Lei, Fang-Yu
    Lee, Chieh
    Lin, Feng-Chuan
    Kuo, Yu-Lin
    2023 ASIA-PACIFIC MICROWAVE CONFERENCE, APMC, 2023, : 482 - 484
  • [49] High efficiency open collector adaptive bias SiGe HBT differential power amplifier
    Lin, Kuei-Cheng
    Yang, Tsung-Yu
    Chen, Kuan-Yu
    Chiou, Hwann-Kaeo
    IEICE TRANSACTIONS ON ELECTRONICS, 2006, E89C (11) : 1704 - 1707
  • [50] A Transformer-Coupling Current-Reuse SiGe HBT Power Amplifier for 77-GHz Automotive Radar
    Giammello, Vittorio
    Ragonese, Egidio
    Palmisano, Giuseppe
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2012, 60 (06) : 1676 - 1683
12345