Thermal Conductivity Measurement Methods for SiGe Thermoelectric Materials

被引：9

作者：

Llin, L. Ferre ^{[1
]}

Samarelli, A. ^{[1
]}

Zhang, Y. ^{[1
]}

Weaver, J. M. R. ^{[1
]}

Dobson, P. ^{[1
]}

Cecchi, S. ^{[2
]}

Chrastina, D. ^{[2
]}

Isella, G. ^{[2
]}

Etzelstorfer, T. ^{[3
]}

Stangl, J. ^{[3
]}

Gubler, E. Muller ^{[4
]}

Paul, D. J. ^{[1
]}

机构：

[1] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland

[2] Politecn Milan, L NESS, Como, Italy

[3] Johannes Kepler Univ Linz, A-4040 Linz, Austria

[4] Swiss Fed Inst Technol, Zurich, Switzerland

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2013年 / 42卷 / 07期

基金：

英国工程与自然科学研究理事会;

关键词：

Silicon germanium; thermal conductivity; thermoelectrics; heterostructure; device fabrication;

D O I：

10.1007/s11664-013-2505-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new technique to measure the thermal conductivity of thermoelectric materials at the microscale has been developed. The structure allows the electrical conductivity, thermal conductivity, and Seebeck coefficient to be measured on a single device. The thermal conductivity is particularly difficult to measure since it requires precise estimation of the heat flux injected into the material. The new technique is based on a differential method where the parasitic contributions of the supporting beams of a Hall bar are removed. The thermal measurements with integrated platinum thermometers on the device are cross-checked using thermal atomic force microscopy and validated by finite-element analysis simulations.

引用

页码：2376 / 2380

页数：5

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