Improved single ion implantation with scanning probe alignment

被引：14

作者：

Ilg, Michael ^{[1
,2
]}

Weis, Christoph D. ^{[1
,2
]}

Schwartz, Julian ^{[1
,2
]}

Persaud, Arun ^{[1
]}

Ji, Qing ^{[1
]}

Lo, Cheuk Chi ^{[3
]}

Bokor, Jeffrey ^{[3
]}

Hegyi, Alex ^{[3
]}

Guliyev, Elshad ^{[2
]}

Rangelow, Ivo W. ^{[2
]}

Schenkel, Thomas ^{[1
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Ion Beam Technol Grp, Berkeley, CA 94720 USA

[2] Tech Univ Ilmenau, D-98684 Ilmenau, Germany

[3] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2012年 / 30卷 / 06期

关键词：

SILICON;

D O I：

10.1116/1.4767233

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Single dopant atoms can affect transport properties in scaled semiconductor devices and coherent control of spin and charge degrees of freedom of single dopant atoms promises to enable quantum computing. The authors report on an improved technique for deterministic placement of single dopant atoms by single ion implantation with scanning probe alignment. Ions are generated in a microwave driven ion source, mass analyzed in a Wien filter, and impinge on spin readout devices after alignment of the ion beam to regions of interest with a noncontact scanning force microscope. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.4767233]

引用

页数：5

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