Improved single ion implantation with scanning probe alignment

被引：14

作者：

Ilg, Michael ^{[1
,2
]}

Weis, Christoph D. ^{[1
,2
]}

Schwartz, Julian ^{[1
,2
]}

Persaud, Arun ^{[1
]}

Ji, Qing ^{[1
]}

Lo, Cheuk Chi ^{[3
]}

Bokor, Jeffrey ^{[3
]}

Hegyi, Alex ^{[3
]}

Guliyev, Elshad ^{[2
]}

Rangelow, Ivo W. ^{[2
]}

Schenkel, Thomas ^{[1
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Ion Beam Technol Grp, Berkeley, CA 94720 USA

[2] Tech Univ Ilmenau, D-98684 Ilmenau, Germany

[3] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2012年 / 30卷 / 06期

关键词：

SILICON;

D O I：

10.1116/1.4767233

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Single dopant atoms can affect transport properties in scaled semiconductor devices and coherent control of spin and charge degrees of freedom of single dopant atoms promises to enable quantum computing. The authors report on an improved technique for deterministic placement of single dopant atoms by single ion implantation with scanning probe alignment. Ions are generated in a microwave driven ion source, mass analyzed in a Wien filter, and impinge on spin readout devices after alignment of the ion beam to regions of interest with a noncontact scanning force microscope. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.4767233]

引用

页数：5

共 50 条

[31] IMPROVED PROBE-SAMPLE SIGNAL BASED MODELING OF SCANNING PROBE MICROSCOPES
Maxwell, Brian
Okorafor, Marvin K.
Clayton, Garrett M.
PROCEEDINGS OF THE ASME 5TH ANNUAL DYNAMIC SYSTEMS AND CONTROL DIVISION CONFERENCE AND JSME 11TH MOTION AND VIBRATION CONFERENCE, DSCC 2012, VOL 2, 2012, : 567 - 573
[32] ION-BEAM IMPLANTATION BY EXPANDING INSTEAD OF SCANNING
SCHELTEN, J
FUHRMANN, T
VANDERHART, A
KURZ, U
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 62 (02): : 275 - 284
[33] Ion implantation of CdTe single crystals
Wiecek, Tomasz
Popovich, Volodymir
Bester, Mariusz
Kuzma, Marian
INTERNATIONAL CONFERENCE ON SEMICONDUCTOR NANOSTRUCTURES FOR OPTOELECTRONICS AND BIOSENSORS (IC SENOB 2016), 2017, 133
[34] Current status of single ion implantation
Shinada, Takahiro
Kumura, Yoshinori
Okabe, Jun
Matsukawa, Takashi
Ohdomari, Iwao
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1998, 16 (04):
[35] Scanning probe microscopy of ion-irradiated materials
Neumann, R
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 151 (1-4): : 42 - 55
[36] Scanning probe microscopy of ion-irradiated materials
Neumann, R.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1999, 151 (1-4): : 42 - 55
[37] ION-PROBE DEVICE WITH AN INTENSIVE SCANNING BEAM
MOSEEVA, NM
OSIPOV, NI
MOSEEV, VV
STOYANOV, PA
MAKAROVA, IS
IVANOV, MD
ZILBERSHTEIN, IM
BOCHAROV, EP
IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1987, 51 (03): : 504 - 506
[38] Current status of single ion implantation
Shinada, T
Kumura, Y
Okabe, J
Matsukawa, T
Ohdomari, I
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (04): : 2489 - 2493
[39] Single atom devices by ion implantation
van Donkelaar, Jessica
Yang, C.
Alves, A. D. C.
McCallum, J. C.
Hougaard, C.
Johnson, B. C.
Hudson, F. E.
Dzurak, A. S.
Morello, A.
Spemann, D.
Jamieson, D. N.
JOURNAL OF PHYSICS-CONDENSED MATTER, 2015, 27 (15)
[40] Probe modification for scanning-probe microscopy by the focused ion beam method
Konoplev B.G.
Ageev O.A.
Smirnov V.A.
Kolomiitsev A.S.
Serbu N.I.
Russian Microelectronics, 2012, 41 (1) : 41 - 50

← 1 2 3 4 5 →