Interplay and Influence of Thermomechanical Stress in Copper-Filled TSV Interposers

被引：0

作者：

Wu, Sheng-Tsai ^{[1
]}

Chen, Cheng-fu ^{[2
]}

Chien, Heng-Chieh ^{[1
]}

机构：

[1] Ind Technol Res Inst, Elect & Optoelect Res Lab, Hsinchu 31040, Taiwan

[2] Univ Alaska Fairbanks, Dept Mech Engn, Fairbanks, AK 99775 USA

来源：

2014 IEEE 64TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC) | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we use finite element simulations to determine the influence of two key design parameters on the thermomechanical stress and the stress interplay in copper-filled TSV arrays. The two parameters are the via's pitch-to-diameter ratio and thickness-to-radius (aspect) ratio. Our analytical results has suggested that the in-plane stress interplay becomes insignificant when the TSV pitch is at least five times of the via's radius. This criterion will be numerically verified in this paper. This work also suggests that it would be inadequate to approximate the thermomechanical stress into a simplified 2D models even for a small H/D ratio (which resembles a think, 2D-like structure).

引用

页码：963 / 966

页数：4

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