Highly-Strained Germanium as a Gain Medium for Silicon-Compatible Lasers

被引：0

作者：

Sukhdeo, Devanand ^{[1
]}

Nam, Donguk ^{[1
]}

Cheng, Szu-Lin ^{[2
]}

Yuan, Ze ^{[1
]}

Roy, Arunanshu ^{[1
]}

Huang, Kevin Chih-Yao ^{[1
]}

Brongersma, Mark ^{[3
]}

Nishi, Yoshio ^{[1
]}

Saraswat, Krishna ^{[1
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[2] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

[3] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

来源：

2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2012年

关键词：

GE; SI;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Germanium-on-silicon lasers have recently been demonstrated. Our theoretical modeling shows that increasing germanium's strain to 1.1%, which we show is achievable, can reduce the threshold for net gain by over a factor of 20.

引用

页数：2

共 26 条

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