Ultralarge transient optical gain from tensile-strained, n-doped germanium on silicon by spin-on dopant diffusion

被引：18

作者：

Xu, Xuejun ^{[1
]}

Wang, Xiaoxin ^{[2
]}

Nishida, Keisuke ^{[1
]}

Takabayashi, Koki ^{[1
]}

Sawano, Kentarou ^{[1
]}

Shiraki, Yasuhiro ^{[1
]}

Li, Haofeng ^{[2
]}

Liu, Jifeng ^{[2
]}

Maruizumi, Takuya ^{[1
]}

机构：

[1] Tokyo City Univ, Adv Res Labs, Setagaya Ku, Tokyo 1580082, Japan

[2] Dartmouth Coll, Thayer Sch Engn, Hanover, NH 03755 USA

来源：

APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 09期

关键词：

ROOM-TEMPERATURE; LIGHT-EMISSION; GE; SI; LASER; DEVICES;

D O I：

10.7567/APEX.8.092101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The direct band gap optical gain of tensile-strained, highly n-doped germanium on silicon is investigated by femtosecond ultrafast transmittance spectroscopy. A germanium film with 0.22% tensile strain is grown on a silicon substrate by using molecular beam epitaxy. An activated doping concentration up to 4 x 10(19) cm(-3) is achieved by phosphorus diffusion from a spin-on dopant source. The transmittance of the germanium film is clearly increased upon increasing the pump power. A peak optical gain of up to 5300 cm(-1) around 1.7 mu m and a gain spectrum broader than 300 nm are obtained. These results show a simple yet promising way to realize gain medium for monolithic-integrated germanium lasers. (C) 2015 The Japan Society of Applied Physics

引用

页数：4

共 24 条

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