Linear Distortion Analysis of 3D Double Gate Junctionless Transistor with High-K Dielectrics and Gate Metals

被引：8

作者：

Baidya, Achinta ^{[1
]}

Lenka, T. R. ^{[2
]}

Baishya, S. ^{[2
]}

机构：

[1] Mizoram Univ, Dept Elect & Commun Engn, Aizawl 796004, India

[2] Natl Inst Technol Silchar, Dept Elect & Commun Engn, Silchar 788010, Assam, India

来源：

SILICON | 2021年 / 13卷 / 09期

关键词：

Junctionless transistor; Non-linear distortion; VIP2; VIP3; IMD3; SILICON-NANOWIRE; PERFORMANCE; IMPACT; MOSFET;

D O I：

10.1007/s12633-020-00669-x

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The paper presents the investigation of linearity distortion analysis of double gate junctionless transistor with high-k gate dielectrics and gate metals. As double gate junctionless transistors have shown high performance in digital circuits, linearity analysis is carried out to understand nonlinear behavior of the device for RFIC applications. In order to ensure minimum intermodulation and higher order harmonics at the system output, different linearity parameters like Second Order Voltage Intercept Point, Third Order distortion, Third Order Input Intercept Point and Third Order Intermodulation Distortion are evaluated. The results show that junctionless transistor should be biased at appropriate low voltage to ensure better linearity which is desired for RFICs. The effects of high-k gate dielectrics and gate metals on linearity characteristics of junctionless transistor are also investigated. Deterioration of the linearity is observed in junctionless transistor for the use of high-k insulators as gate dielectrics. It is also observed that low work function gate material is suitable to achieve higher linearity in low power applications.

引用

页码：3113 / 3120

页数：8

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