Nanoscale lateral field-emission triode operating at atmospheric pressure

被引：3
|
作者：
Pescini, L
Tilke, A
Blick, RH
Lorenz, H
Kotthaus, JP
Eberhardt, W
Kern, D
机构：
[1] Univ Munich, Ctr NanoSci, D-80539 Munich, Germany
[2] Univ Munich, Sekt Phys, D-80539 Munich, Germany
[3] Univ Tubingen, Inst Angew Phys, D-72076 Tubingen, Germany
来源：
ADVANCED MATERIALS | 2001年 / 13卷 / 23期
关键词：
D O I：
10.1002/1521-4095(200112)13:23<1780::AID-ADMA1780>3.3.CO;2-5
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A nano-triode fabricated out of doped silicon-on-insulator material is demonstrated. Low turn-on voltages and the possibility of direct integration into existing silicon technology are but two of the advantages of these new devices. It is also possible to tune the current collected at the drain electrode by biasing the gate electrodes. The Figure depicts a scanning electron micrograph of the free-standing silicon nanostructure.
引用
收藏
页码：1780 / 1783
页数：4
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