Nanoscale Manipulation for The Fabrication of Field-emission Air-channel Transistors

被引：0
|
作者：
Liu, Meng [1 ]
Lei, Yu [1 ]
Li, Tie [1 ]
Wang, Yuelin [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Sci & Technol Microsyst Lab, Shanghai 200050, Peoples R China
来源：
2019 IEEE 19TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO 2019) | 2019年
关键词：
Field emission; air channel transistor; nanoscale manipulation; nanowires;
D O I：
10.1109/nano46743.2019.8993909
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A method based on nanoscale manipulation and focused ion beam etching is put forward for the fabrication of nanoscale field emission transistors with air channels. Using this method, the shape and size of the emitter is controllable with nanoscale precision. Material compatibility of the method is demonstrated with SiC, VO2, Ge and Cu. Low voltage field-emission behaviors and air-channel transistor characteristics are also demonstrated with an obvious forward-directional capability.
引用
收藏
页码：459 / 462
页数：4
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