Lead Chalcogenide Films Grown by Pulsed Laser Deposition

被引：0
|
作者：
Virt, I. S. [1 ,2 ]
Tur, Y. [1 ]
Potera, P. [2 ]
Virt, I. S. [1 ,2 ]
Lusakowska, E. [3 ]
Luka, G. [3 ]
机构：
[1] Drogobych State Pedag Univ, Drogobych, Ukraine
[2] Univ Rzeszow, Rzeszow, Poland
[3] Inst Phys PAS, Warsaw, Poland
来源：
PROCEEDINGS OF THE 2017 IEEE 7TH INTERNATIONAL CONFERENCE NANOMATERIALS: APPLICATION & PROPERTIES (NAP) | 2017年
关键词：
chalcogenide films; surface roughness; power spectral density analysis; pulsed lased deposition;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Three lead chalcogenide films, PbTe, PbSe, and PbS, with a high structural quality were grown by pulsed lased deposition. The films were grown on single crystal substrates (Si, KCl, Al2O3) and on Si covered with a Si3N4 buffer layer. The Si3N4 layer latter facilitated the lead chalcogenide layer nucleation during the first growth stages and resulted in a more homogeneous surface morphology and a lower surface roughness. The surface geometry (roughness) of the films grown on Si3N4 was studied by means of the power spectral density analysis.
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页数：3
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